RapidThermalAnnealing相关论文
The yttrium iron garnet (YIG) thin films prepared by the sol-gel method and rapid thermal annealing (RTA) process for in......
Rapid thermal annealing for α-Si/metal/semiconductor waveguide for active control of surface plasmon
The influence of Au/Ni-based ohmic contact formed on the lowly doped (7.3×1017cm-3,Zn-doped) InGaAsP films to active co......
Effect of Rapid Thermal Annealing On the Properties of BaTiO3 Thin Films On Polycrystalline Ni Subst
Ferroelectric BaTiO3 (BTO) thin films on polycrystalline nickel (Ni) substrates with good dielectric, ferroelectric, pie......
采用刻蚀技术形成台面结构的红外探测器光敏元，其表面漏电流和器件热稳定性与半导体蚀刻表面的特性密切相关。对制备的InAs/GaSb II......
研究了快速热退火(RTA) 对GaAs/AlGaAs量子阱材料结构及发光特性的影响。结果表明,当退火温度为800 ℃时,材料晶体质量和光致发光(......
Characterization and Piezoelectric Properties ofReactively Sputtered Highly C-axis (Sc,Al)NThin Film
Diamond has the highest surface acoustic wave (SAW) velocity among all materials.It can also provide high breakdown volt......
形成硅化物的技术有多种：蒸发，溅射和化学气相沉积。文中对单靶溅射钛膜进行了研究。采用两步快速热退火工艺形成ＴｉＳｉ２，通过实验，得出了ＣＭＯＳ自对......
报道了利用快速退火法控制膜中纳米硅粒大小的方法,讨论了升温快慢与所形成的纳米硅粒大小的关系.......
